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| SGSF464 SGSIF464 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED LOW BASE-DRIVE REQUIREMENTS U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)) 3 2 1 APPLICATIONS: s SWITCH MODE POWER SUPPLIES s HORIZONTAL DEFLECTION FOR COLOUR TVS AND MONITORS DESCRIPTION The SGSF464 and SGSIF464 are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The SGSF series is designed for high speed switching applications such as power supplies and horizontal deflection circuits in TVs and monitors. TO-218 3 2 1 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V CES V CEO VEBO IC I CM IB I BM P tot T s tg Tj June 1996 Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) T otal Dissipation at Tc = 25 C Storage Temperature Max. Operating Junction T emperature o Valu e 1200 600 7 10 15 7 12 125 -65 to 150 150 57 Un it V V V A A A A W o o C C 1/7 SGSF464/SGSIF464 THERMAL DATA TO-218 R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1 30 ISO WATT218 2.2 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I CEO I EBO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (IB = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 1200 V V EC = 380 V V EC = 600 V V BE = 7 V I C = 100 mA IC = 6 A I C = 3.5 A IC = 6 A I C = 3.5 A IB = 1.2 A IB = 0.5 A IB = 1.2 A IB = 0.5 A 0.6 2.45 0.12 0.6 1.7 0.12 0.6 1.3 0.2 1.4 0.1 2.8 0.2 600 1.5 1.5 1.5 1.5 1.2 3.5 0.4 Min. Typ . Max. 200 200 2 1 Un it A A mA mA V V V V V s s s s s s s s s s s V CEO(sus ) Collector-Emitter Sustaining Voltage V CE(sat ) V BE(s at) t ON ts tf t ON ts tf t ON ts tf ts tf Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Turn-on T ime Storage Time Fall T ime Turn-on T ime Storage Time Fall T ime Turn-on T ime Storage Time Fall T ime Storage Time Fall T ime RESISTIVE LO AD IC = 6 A v CC = 250 v I B1 = -2 A I B1 = 1 A RESISTIVE LO AD v CC = 250 v IC = 5 A I B1 = -2 A I B1 = 1 A With Antisaturation Network RESISTIVE LO AD IC = 5 A V CC = 250 V V BE (off) = - 5 V I B1 = 1 A INDUCTIVE LOAD h FE = 5 IC = 5 A V CL = 450 V V BE(off ) = -5 V L = 300 H R BB = 0.8 INDUCTIVE LOAD h FE = 5 IC = 5 A V CL = 450 V V BE(off ) = -5 V L = 300 H R BB = 0.8 o T c = 100 C ts tf Storage Time Fall T ime 4 0.3 s s Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2/7 SGSF464/SGSIF464 Safe Operating AreaThermal Impedance Derating Curve DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Reverse Biased SOA 3/7 SGSF464/SGSIF464 Resistive Load Switching Times Resistive Load Switching Times Switching Times Percentance Variation 4/7 SGSF464/SGSIF464 TO-218 (SOT-93) MECHANICAL DATA mm MIN. A C D E F G H L2 L3 L5 L6 R O - 4 3.95 31 12.2 4.1 - 0.157 0.5 1.1 10.8 14.7 - 18 4.15 0.155 1.220 0.480 0.161 4.7 1.17 2.5 0.78 1.3 11.1 15.2 16.2 0.019 0.043 0.425 0.578 - 0.708 0.163 TYP. MAX. 4.9 1.37 MIN. 0.185 0.046 0.098 0.030 0.051 0.437 0.598 0.637 inch TYP. MAX. 0.193 0.054 DIM. A C L5 L3 L2 L6 D E H F R 1 2 3 P025A G 5/7 SGSF464/SGSIF464 ISOWATT218 MECHANICAL DATA DIM. MIN. A C D D1 E F G H L1 L2 L3 L4 L5 L6 M N U 5.35 3.3 2.9 1.88 0.75 1.05 10.8 15.8 20.8 19.1 22.8 40.5 4.85 20.25 3.5 2.1 4.6 mm TYP. MAX. 5.65 3.8 3.1 2.08 1 1.25 11.2 16.2 21.2 19.9 23.6 42.5 5.25 20.75 3.7 2.3 MIN. 0.210 0.130 0.114 0.074 0.029 0.041 0.425 0.622 0.818 0.752 0.897 1.594 0.190 0.797 0.137 0.082 0.181 inch TYP. MAX. 0.222 0.149 0.122 0.081 0.039 0.049 0.441 0.637 0.834 0.783 0.929 1.673 0.206 0.817 0.145 0.090 L3 N A E L2 L5 L6 F M U H 1 L1 L4 2 3 G D1 C D P025C 6/7 SGSF464/SGSIF464 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied. s SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A .. 7/7 |
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